FQPF5N50C 5N50C transistor MOSFET n-channel TO220F Maximum Power Dissipation (Pd): 38 W Maximum Drain-Source Voltage |Vds|: 500 V Maximum Gate-Source Voltage |Vgs|: 30 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V Maximum Drain Current |Id|: 5 A Maximum Junction Temperature (Tj): 150 °C Total Gate Charge (Qg): 24 nC Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm