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P1060ATF NIKOS transistor MOSFET n-channel TO220F
P1060ATF NIKOS transistor MOSFET n-channel TO220FType of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 40 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 30 nS
Drain-Source Capacitance (Cd): 170 pF
Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm
Maximum Power Dissipation (Pd): 40 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 30 nS
Drain-Source Capacitance (Cd): 170 pF
Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm
