FQPF5N60C 5N60C transistor MOSFET n-channel TO220F

FQPF5N60C 5N60C transistor  MOSFET n-channel TO220F
Maximum Power Dissipation (Pd): 38 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 24 nC
Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm